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Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification
PHOSPHATE COATING, MANGANESE, MICRO CRYSTALLINE ***TO BE USED WITH FORD WSS-M99P1111-A***
This International Standard specifies a micrographic method of determining apparent ferritic or austenitic grain size in steels. It describes
Steels - Micrographic determination of the apparent grain size (ISO 643:2003)?
crystal unit holders: Part 12 Microminiature, metal, cold-welded, two-wire crystal unit holder type EB
Semiconductor devices. Micro-electromechanical devices. Wafer to wafer bonding strength measurement for MEMS
Synthetic mica large single chip for radar microwave devices
Microcrystalline Wax Derived From Petroleum — Specification ( First Revision )
Steels – Micrographic determination of the apparent grain size (ISO 643:2019)
Technical specifications for installation engineering of microcrystalline panels for industrial use
This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix
MICROCIRCUIT, LINEAR, TRANSISTOR ARRAYS/MATCHED PAIR, MONOLITHIC SILICON
IEC電子元器件質(zhì)量評(píng)定體系遵循lEC章程并在1EC授權(quán)下工作。該體系的日的是確定質(zhì)量評(píng) 定程序，以這種方式使一個(gè)參加國(guó)按有關(guān)規(guī)范要求放行的電子元器件無(wú)需進(jìn)一步試驗(yàn)而為其他所有參 加國(guó)同樣接受。 本空白詳細(xì)規(guī)范是半導(dǎo)體器件的一系列空白詳細(xì)規(guī)范之一，并應(yīng)與下列國(guó)家標(biāo)準(zhǔn)一起使用
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors; Microwave field effect transistors; Blank detail specification
The symbols and terms of this document are contained in JEDEC Publication No. 77 and are not in conflict with those in IEC Publication 147-OC
Measurement of Small-Signal Transistor Scattering Parameters
Steels - Micrographic determination of the apparent grain size (ISO 643:2024)
ISO 643:2012 specifies a micrographic method of determining apparent ferritic or austenitic grain size in steels. It describes the methods
Steels - Micrographic determination of the apparent grain size (ISO 643:2012)
Semiconductor devices－Discrete devices－Part 4－1：Microwave diodes and transistors－Microwave field effect transistors－Blank detail specification
